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| savantic semiconductor product specification silicon pnp power transistors 2SB563 description with to-66 package low collector saturation voltage applications for low frequency power amplifier applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -3 a p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-66) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB563 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c =-1ma; i e =0 -80 v v (br)ceo collector-emitter breakdown voltage i c =-10ma; i b =0 -80 v v (br)ebo emitter-base breakdown voltage i e =-1ma; i c =0 -5 v v cesat collector-emitter saturation voltage i c =-3a; i b =-0.3a -1.0 v v besat base-emitter saturation voltage i c =-3a; i b =-0.3a -1.5 v i cbo collector cut-off current v cb =-80v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.1 ma h fe dc current gain i c =-1a ; v ce =-2v 30 200 savantic semiconductor product specification 3 silicon pnp power transistors 2SB563 package outline fig.2 outline dimensions |
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